80812 tkim/70306/53006ea msim tb-00002348 no. a0412-1/9 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 2sc6097 bipolar transistor 60v, 3a, low v ce ( sat ) , npn single tp/tp-fa applications ? dc / dc converter, relay drivers, lamp drivers, motor drivers, inverter features ? adoption of fbet, mbit process ? large current capacity ? low collector-to-emitter saturation voltage ? high-speed switching ? high allowable power dissipation speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 100 v collector-to-emitter voltage v ces 100 v collector-to-emitter voltage v ceo 60 v emitter-to-base voltage v ebo 6.5 v collector current i c 3a collector current (pulse) i cp 5a base current i b 600 ma continued on next page. package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-003 7003-003 ordering number : ENA0412A product & package information ? package : tp ? package : tp-fa ? jeita, jedec : s c-64, to-251 ? jeita, jedec : sc-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) tl 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : base 2 : collecto r 3 : emitter 4 : collecto r tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : base 2 : collecto r 3 : emitter 4 : collecto r tp-fa c6097 lot no. 2,4 3 1 2sc6097-e 2sc6097-tl-e
2sc6097 no. a0412-2/9 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c 0.8 w tc=25 c15w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =50v, i e =0a 1 a emitter cutoff current i ebo v eb =4v, i c =0a 1 a dc current gain h fe v ce =2v, i c =100ma 300 600 gain-bandwidth product f t v ce =10v, i c =500ma 390 mhz output capacitance cob v cb =10v, f=1mhz 18 pf collector-to-emitter saturation voltage v ce (sat)1 i c =1a, i b =50ma 100 150 mv v ce (sat)2 i c =1a, i b =100ma 90 135 mv base-to-emitter saturation voltage v be (sat) i c =1a, i b =100ma 0.84 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 100 v collector-to-emitter breakdown voltage v (br)ces i c =100 a, r be = 0 100 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 60 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 6.5 v turn-on time t on see speci ed test circuit 35 ns storage time t stg 680 ns fall time t f 24 ns switching time test circuit ordering information device package shipping memo 2sc6097-e tp 500pcs./bag pb free 2sc6097-tl-e tp-fa 700pcs./reel pb free v r 10 r b v cc =30v i c =10i b1 = --10i b2 =0.5a v be = --5v ++ 50 input output r l 470 f 100 f pw=20 s i b1 d.c. 1% i b2 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2sc6097 no. a0412-3/9 i c -- v ce collector current, i c -- a collector-to-emitter voltage, v ce -- v i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v 5.0 3.5 4.5 1.5 2.5 0.5 4.0 2.0 3.0 1.0 0 3.0 1.0 2.0 1.5 2.5 0.5 0 0.2 0 0.4 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 it11046 10ma i b =0ma 2ma ta=75 c 25 c --25 c v ce =2v 0 0.2 0.4 0.6 0.8 1.0 1.2 it11047 5ma 20ma 40ma 60ma 80ma 100ma v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a cob -- v cb v ce (sat) -- i c v be (sat) -- i c collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v h fe -- i c f t -- i c collector current, i c -- a dc current gain, h fe gain-bandwidth product, f t -- mhz collector current, i c -- a it11052 3 2 7 5 10 5 7 it11050 ta=75 c --25 c it11051 i c / i b =10 25 c 3 1.0 3 ta= --25 c 25 c 75 c 2 7 5 i c / i b =10 it11053 1000 7 100 5 3 2 5 7 0.01 3 25 0.1 7235 235 1.0 7 0.01 3 25 0.1 723 23 5 1.0 7 5 7 100 3 3 2 7 5 2 0.01 3 25 0.1 7235 235 1.0 7 0.1 3 25 1.0 7235 10 3 25 100 7 72 0.01 7 2 5 3 3 2 0.1 7 5 3 5 2 0.01 3 25 3 25 0.1 7235 1.0 7 it11048 it11049 v ce =10v f=1mhz ta=75 c --25 c i c / i b =20 25 c 0.01 3 25 0.1 7235 235 1.0 7 0.1 0.01 5 2 7 7 5 5 3 3 2 ta=75 c 25 c --25 c v ce =2v
2sc6097 no. a0412-4/9 0.01 2 0.1 7 5 3 2 2 1.0 7 5 3 10 7 5 3 1.0 0.1 2 2 5 3 7 10 2 5 3 7 100 5 3 7 i cp =5a 100ms 1ms i c =3a it11054 500 s < 10 s dc operation 100 s 10ms 0.01 2 0.1 7 5 3 2 2 1.0 7 5 3 10 7 5 3 1.0 0.1 2 2 5 3 7 10 2 5 3 7 100 5 3 7 i cp =5a i c =3a it11055 5 00 s < 10 s dc operation 1ms 10ms 100ms 100 s a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v ta=25 c single pulse a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v tc=25 c single pulse 17.5 0 15.0 10.0 7.5 5.0 2.5 12.5 20 060 40 80 100 140 120 160 it11057 0 0.9 0.5 0.3 0.1 0.7 0.6 0.8 0.4 0.2 20 060 40 80 100 140 120 160 it11056 collector dissipation, p c -- w p c -- ta collector dissipation, p c -- w p c -- tc ambient temperature, ta -- c case temperature, tc -- c
2sc6097 no. a0412-5/9 taping speci cation 2sc6097-tl-e
2sc6097 no. a0412-6/9 outline drawing land pattern example 2sc6097-tl-e mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
2sc6097 no. a0412-7/9 bag packing speci cation 2sc6097-e
2sc6097 no. a0412-8/9 outline drawing 2sc6097-e mass (g) unit 0.315 * for reference mm
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